high voltage surface mount swi tching diode fast sw itching speed high conductance high reverse breakdown voltage rating o rdering information(pb-free) device marking shipping 0mb d3004a k a d 3000 /ta p e &r ee l ma xi m um rati ngs @ t a =25 unless otherwise specified characteristic sym bol value unit repetitive peak reverse voltage v rrm 350 v working peak reverse voltage dc blo c king voltage v rwm v r 300 v rms reverse voltage v r (rms) 212 v forward continuous current(note 2) i f 225 ma peak repetitive forward current(note 2) i frm 625 ma non-repetitive peak forward surge current @t=1.0 s @t=1.0s i fsm 4.0 1.0 a power dissipation(note 2) pd 350 mw thermal resistance junction to ambient air(note 2 ) r 0ja 357 / w operating and storage temperature range t j , t stg -65 to +150 electrical ch aracteristics @ t a =25 unl ess otherwise specified, per element chara cteristic symbol min typ max unit test condition reverse breakdown voltage(note 1 ) v (br) r 350 v i r =100 a forward voltage(note 1) v f 0. 78 0 .93 1. 03 0.87 1.0 1.25 v i f =20 ma i f =100ma i f =200ma reverse current(note 1) i r 30 35 100 100 na a v r =240v vr =240v, t j =150 total capacitance c t 1. 0 5. 0 p f v r =0v, f =1.0mhz reverse recovery time t rr 50 n s i f =i r =30ma irr =3.0ma, r l =100? notes: 1. short duration test pulse used to minimize self-heating effect. 2. par t mounted on fr-4 board with recommended pad layout. 1 sot ?23 2 3 3 anode 1 cathode 2 cathode feature z we declare that the material of product compliance with rohs requirements. z z z 2012-1 willas electronic corp. MMBD3004A z
400 t , ambient temperature, (c) a fig. 1 power derating curve, tot al p ackage p , power dissipation (mw) d 200 100 300 0 500 0 100 200 0 400 800 1200 1600 2000 i , instantaneous forward current ( m a ) f v , instantaneous forward voltage (mv) f fig. 2 typical forward characteristics, per element 100 1.0 10 0.1 0.01 1000 t = 150 c j t = 25 c j 0 50 100 150 200 250 300 350 v , instantaneous reverse voltage (v) r fig. 3 typical reverse characteristics, per element 100 1.0 10 0.1 0.01 0.001 1 0 0 0 t = 150 c j t = 75 c j t = 25 c j 0.7 0.8 0.01 0.1 1.0 10 100 c , total capacitance (pf) t fig. 4 typical total capacitance vs. reverse voltage, per element v , reverse voltage (v) r 0.9 1.0 1 . 1 2012-1 willas electronic corp. high voltage surface mount switching diode MMBD3004A
mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 2012-1 willas electronic corp. high voltage surface mount switching diode MMBD3004A dimensions in inches and (millimeters) .080(2.04) .070(1.78) .110(2.80) .083(2.10) .006(0.15)min. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)max. .122(3.10) .106(2.70) .063(1.60) .047(1.20) sot-23
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